1.1 — 13 February 2019 Application note Document information Information Content Keywords GaN FET, Half bridges, Circuit design, PCB layout Abstract This appplication note explains the Recommendations for circuit design and PCB layout when applying GaN FET half bridges. This application note discusses the design of a digitally controlled 1/16th brick converter using GaN FETs for a 48 V to 12 V, 9 V, 5 V application, with up to 25 A output current, 300 W output power, a peak efficiency of 95.8%, and maximum power density of 730 W/in3. Such applications have special requirements such as lightweight, small size, low torque ripple, and precision control. High frequency capability adds further value in size and transient response in regulators, and fidelity in class D amplifiers. a new value to the product. GN010 Application Note ... GaN Systems EZDrive circuit is a low cost, easy way to implement a GaN driving circuit with a standard MOSFET controller with integrated driver Application Considerations Silicon MOSFETS Reflectance GaN Systems has a proven low cost, small size gate drive solution called EZDrive ® which converts a typical 0-12V MOSFET driver output to a -6V to +6V GaN drive. In this white paper eGaN FET technology is applied in a high frequency resonant converter. They address convenience-of-use issues such as source to device distance, device orientation on the source, multiple devices on a single source, higher power capability, simplicity of use, and imperfect placement. To address these needs, inverters powering the motors need to operate at higher frequency, but require advanced techniques to reduce the resultant higher power loss. GN005 Rev 150212 © 2009 - 2015 GaN Systems Inc. 1 ! To understand how this works, consider the frequency response of the system plotted in figure 2 below, with the various available measurement system bandwidths, and the ringing frequencies of the two designs considered in this application note. Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement mode gallium nitride on silicon (eGaN) power FETs and ICs has developed a next generation of eGaN technology that makes it possible to cut the size of our products in half, while giving the power system designer access to significantly higher performance. GaN Systems’ EZDrive (SM) circuit is a low cost, easy way to implement a GaN driving circuit. This application note, which is written for those who have basic knowledge on circuit design and Si power devices, to understand how to use our GaN power transistor. Application Note: Using Peregrine’s High-Speed FET Drivers Application Note: Using the PE29102 as a Power-up Sequencer for Depletion-mode RF GaN HEMT Amplifiers Application Note: PE29101/102 Footprint Requirements Application Note: Using the PE29102 Driver as a Differential Voltage Translator Application Note: Class D Audio Using the PE29102 Background Theory 3.1. In this white paper we continue our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN FETs and MOSFETs. endobj The SEPIC converter is ideal for applications with a wide input voltage range and where the output voltage can be either below or above the input voltage. switching!speed!can!be!bettercontrolled!asthe!Millercharge!iscontrolled! for GaN FET half bridges Rev. Power GaN technology: the need for efficient power conversion Rev. PCB Thermal Analysis Figure!3!showsasimplified!thermal!model! %���� Common curve tracers, parametric analyzers, and automatic discrete device parametric testers that are used for an n-channel power MOSFET will be applicable for the characterization of GaN transistors. The EPC9204 configured as a synchronous Buck converter yielded a power density of 1000 W/in3 and is capable of delivering 12 A. Gallium nitride (GaN) offers fundamental advantages over silicon. This work will discuss the impact of in-circuit parasitics on performance and propose printed circuit board (PCB) layout methods to improve parallel performance of high speed GaN transistors. • Good engineering practice of layout techniques are required to minimize parasitic inductance and fully utilize the benefit of GaN Systems’E-HEMTs. Light Detection and Ranging (Lidar) is a remote sensing technology which transmits pulses of light from the sensor and measures the reflection to determine the location and distance of objects. EPC’s wafer level chip-scale packaging such as the Land Grid Array (LGA) and Ball Grid Array (BGA) packages shown in figure 1, has enabled a new level of performance in power conversion. application note describes the thermal considerations of GaN-on-Si Technology from a component and device mounting perspective. In this application note, we present data showing the installation of the kSA RateRat thin-film deposition monitor for real-time analysis of GaN films commonly used for high-brightness LED’s and radio frequency power electronics. <> An initial layer of aluminum nitride (AlN) is Application Note 3 of 29 V 1.0 2018-05-03 Driving CoolGaN™ 600 V high electron mobility transistors Introduction 1 Introduction Gallium nitride (GaN) is a very promising material for power semiconductors. endstream Using eGaN FETs to increase efficiency and/or increase switching frequency will reduce the size and cost of the system. eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. <>/Metadata 2917 0 R/ViewerPreferences 2918 0 R>> In conclusion, small signal RF characteristics will also be provided. GN001 Rev 2014-10-21 © 2009 - 2014 GaN Systems Inc. 2 ! eGaN FETs and integrated circuits from EPC have taken a very different approach to packaging power semiconductors – we have ditched the package altogether. Application Note: EZDrive Solution for GaN Systems’ E-HEMT. This application note will address an eGaN FET module designed as a way for power-conversion systems designers to easily evaluate the exceptional performance of gallium nitride transistors. If a laser is used as the optical source, one can measure the distance of a small spot even at a long range. Note: The data contained in this document is for information only. (How2AppNote002), How to Design a Compact Low-voltage BLDC Motor Drive Inverter Using a Monolithic GaN ePower™ Stage (How2AppNote017), How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN FETs (How2AppNote016), The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote005), How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote007), Designing PCB Footprint for EPC eGaN FETs and ICs (How2AppNote008), How to Manually Assemble an eGaN FET or IC (How2AppNote003), How to Get More Power Out of a High-Density eGaN-Based Converter with a Heatsink (How2AppNote012), How to Effectively Measure High Performance eGaN FETs in Applications (How2AppNote006). eGaN FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. PX ®-T devices • Thermal Design for high-power with GaN. We will also take a detailed look at an eGaN FET based multilevel topology that can further maximize the benefit of using eGaN FETs over conventional silicon solutions. eGaN FETs are capable of switching much faster than Si MOSFETs, requiring more careful consideration of PCB layout design to minimize parasitic inductances. EPC offers a variety of technical documents including application notes and white papers for your use in designing with and evaluating our Gallium Nitride (GaN) based products and solutions. It considers several suitable circuit configurations a nd determines which one presents the most advantageous use with a GaN power switch. The EPC9205 configured as a synchronous Buck converter yielded a power density of 1400 W/in3 and is capable of delivering 15 A. �2V�xQӟ5F6N \��7q)S��I'@R&F21�YZQV�PL�Z�ĉ�w_��p�6�:H��V�!i�+hy���ҳNN�خf�U��꫗�Ӥ�l������U5]0)�����+�*m�r�����D��q�\'��`4�M4Z�{k��JCpʳ���f,�5�w�:D�e�:��\>����Dz��LT��e�{q��Z�jg�:4�OC#��2�%�~���\R���iZ>U�ˢ�����&C����3g��Oh��z���c�7�%ݔ��SJy��}�> o눌e�����?����oHY�fv���|� ?��s�]��ĊM�5�5����$��%jk}�=Hk�v�5��66$)�)�β���ȇב߀v:�ɷ��K��T�&�R���is�� �i�� Copyright © 2021 Efficient Power Conversion Corporation. Bias Sequencing GaN HEMTs are depletion mode devices which require a negative voltage applied to the gate. 2 0 obj With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance. This is EPC’s fifth generation (Gen 5) GaN technology and it is further evidence that GaN-on-silicon is a rapidly improving technology that is already more than 10 X higher performance than silicon MOSFETs while costing less to produce. 3 0 obj In the last few years, one particular form of lidar, time-of-flight (TOF) distance measurement, has become popular. Using eGaN™ FETs is very similar to using power MOSFETs. This paper will demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, as compared to what is achievable with existing power MOSFET devices. The island structure is the core GaN Systems IP. • GaN Systems’E-HEMTs have very low packaging inductance, while enabling ultra-low inductance PCB power loops. The EPC GaN transistors generally behave like n-channel power MOSFETs. When combined with steerable optics, one can sweep the spot distance measurement and map objects in 3-D space. EPC’s small 200 V eGaN FET was selected for RF evaluation and should be viewed as a starting point from which the RF characteristics of future eGaN FET part numbers can be optimized for even better RF performance at higher frequencies. This increase reduces the efficiency of the power amplifier (PA). A new line of eGaN FETs is now available that are not only much faster and smaller than power MOSFETs with similar on-resistance and voltage ratings, but these new transistors are priced favorably at comparable volumes. Nomenclature The device name (type number) is shown at the top of the data sheet. There are four important points to note about using this GPS circuit. This application note discusses the design of a digitally controlled 1/16th brick converter using GaN FETs for a 48 V to 12 V, 9 V, 5 V application, with up to 25 A output current, 300 W output power, a peak efficiency of 95.8%, and maximum power density of 730 W/in 3. It has the dual advantage of an up to four times reduction in the size and cost of gallium nitride devices, while transferring substantial current from the on-chip metal to a separate carrier. This application note outlines how the PE29102 pulse width modulation (PWM) gallium nitride (GaN) driver can be used as a power-up sequencer for use with depletion-mode GaN radio frequency (RF) transistors. The chip-scale packaging of eGaN also offers six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. ��Z�FH��jG_O������¬�#����AK��釓8�G0d�޾&���M�+�;5 This Applications Note investigates the testing method and results of thermal resistance measurements on eGaN FETs. Gallium nitride based transistors and ICs offer designers of power converters a path towards achieving higher output power, higher efficiency, and higher power density. Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. Here are the guidelines for manual assembly of these FETs and ICs. APPLICATION NOTE AN-011 NITRONEX CORPORATION 5 JUNE 2008 Growth of high quality GaN on Si (111) can be achieved by addressing the significant levels of lattice misfit (~17%) and thermal expansion coefficient (TEC) (~ 56%) mismatch. Gate current Because the GaN HEMT gate terminal is a Schottky diode, bias generators must provide significant amounts of both positive and negative gate current: •GaN HEMTs have higher gate leakage currents than comparable LDMOS devices. 3. December 21, 2018 An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. 3. Calculations of device temperature during operation assume that power dissipation is spread evenly over the entire active area of the device, which is not always true. The EPC9093 GaN development board configured as a synchronous buck converter yields a main power stage area of only 10 mm x 9 mm, at least 2x smaller than its Si equivalent, and is capable of producing an output voltage ranging from 5 V to 12 V. The smallest, most cost effective and highest efficiency non-isolated 48 V to 12 V converter, suitable for high-performance computing and telecommunication applications, can be achieved by employing eGaN® FETs such as the EPC2045. However, In the last few years, however, the rate of improvement has slowed as the silicon power MOSFET has asymptotically approached its theoretical bounds. GaN Systems – Confidential – 1 GN010 Application Note. This application note will address the issues associated with biasing, bias sequencing and temperature compensation of a Nitronex GaN HEMT. This application note presents isolated gate driving solutions to increase the system efficiency, power density and robustness of high-performance power conversion applications. GaN Systems makes it easy for designers and systems engineers to adopt gallium nitride solutions. It is adaptable to any power level, any frequency, and any LLC and PFC controller. endobj The long-term evolution (LTE) standard for the fourth-generation (4G) and the fifth-generation (5G) wireless systems requires signals with higher PAPR compared with prior generations. improves the performance in multiple operating environments. APPLICATION NOTE AN-013 NITRONEX CORPORATION 8 MAY 2009 5. GN010 Application Note ... GaN Systems EZDrive circuit is a low cost, easy way to implement a GaN driving circuit with a standard MOSFET controller with integrated driver Application Considerations Silicon MOSFETS Proper assembly techniques are essential to take full advantage of GaN technology capability.

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