Note that blocking some types of cookies may impact your experience on our websites and the services we are able to offer. “Power electronic engineers have always used analog control standard CCM/CRM boost PFC converters. We also use different external services like Google Webfonts, Google Maps, and external Video providers. Otherwise you will be prompted again when opening a new browser window or new a tab. Select Your IndustryConsumer ElectronicsDatacentersRenewable EnergyIndustrialAutomotiveOther. Terms & Conditions | Privacy Policy. The device demonstrates how to … It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. Evaluation board. We use cookies to let us know when you visit our websites, how you interact with us, to enrich your user experience, and to customize your relationship with our website. It can be used to estimate the performance of the half-bridge to measure efficiency. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. Schematic Diagram The TDTTP4000W066C 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high efficiency single-phase AC-DC conversion. Click to enable/disable Google reCaptcha. GaN Systems and ON Semiconductor have joint availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high speed gate driver evaluation board. The new TDTTP4000W065AN evaluation board from Transphorm is now available and it features its latest SuperGaN Gen IV GaN technology to convert single-phase AC to DC power up to 4 kilowatts (kW), together with bridgeless totem-pole power factor correction (PFC) with traditional analog control. Changes will take effect once you reload the page. The Evaluation Board operates in three modes: pulse test mode, buck/standard half-bridge mode, and boost mode. LMG1205 GaN Power Stage Evaluation Module. ... such as powering up and supplying chipsets—is a relatively fixed amount in any system. Click on the different category headings to find out more. GaN Systems has announced the availability of a new evaluation board using what it believes is the world's fastest combination of GaN power transistors and power drivers. You can check these in your browser security settings. Overview. The GS66508T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. The new GS66508T high-current Half-Bridge Evaluation Board is available now through GaN Systems’ worldwide distributor network. “Power electronic engineers have always used analog control standard CCM/CRM boost PFC converters. Please be aware that this might heavily reduce the functionality and appearance of our site. https://www.infineon.com/cms/en/product/evaluation-boards/eval_2500w_pfc_gan_a/Explore CoolGaN™ - the new power paradigm. 1.2-A, 5-A 100-V, half bridge gate driver with 5-V UVLO for GaNFET and MOSFET, – LMG1205 GaN Power Stage Evaluation Module. For more information, please visit GaN Systems' website. Transphorm, Inc. announced availability of its newest evaluation board, the TDTTP4000W065AN. See terms of use. OTTAWA, Ontario, December 3, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor (OnSemi), a world-leading supplier of power … The GS66508B-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. Due to security reasons we are not able to show or modify cookies from other domains. GaN Board Evaluation. This motherboard, with power magnetics and storage capacitors, allows you to implement an open-loop power converter when supplied with a FET daughter board … Order now. Using GaN FETs in the fast-switching leg of the circuit and low-resistance MOSFETs in the slow-switching leg of the circuit results in improved performance and efficiency. Check to enable permanent hiding of message bar and refuse all cookies if you do not opt in. Driver with Integrated Bootstrap Diode datasheet (Rev. We may request cookies to be set on your device. The MDC901-EVKHB evaluation kit gives power designers a head start for design-in of the MDC901 200V GaN gate driver.The evaluation board (EVB) utilizes GaN System’s 100V enhancement mode HEMTs and Würth Elektronik components in a half-bridge configuration. Content is provided "as is" by TI and community contributors and does not constitute TI specifications. If the backside of the daughter board is marked with the GaN System’s logo, you have an earlier version, the GS66508T-EVBDB, which is covered by this set of documents. The TDTTP4000W066B 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high efficiency single-phase AC-DC conversion. GaN Board Evaluation. The NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. GaN E-HEMT fast switching, low output capacitance (Coss), and zero reverse recovery charge (QRR) enable a new level of performance for Class D audio amplifiers. Overview. 80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. Because these cookies are strictly necessary to deliver the website, refuseing them will have impact how our site functions. A), Simple open loop design to evaluate performance of LMG1205 driving a GaN Half-Bridge, VDD supply generated from an onboard linear regulator, Single PWM  input on board for PWM signal with < 8ns dead time, Kelvin sense capability for input and output to measure efficiency. Why do I need this? If you refuse cookies we will remove all set cookies in our domain. Single-Phase, 3-Level Half-Bridge Inverter, Isolated Phase-Shift Full Bridge Converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. GaN Systems has an evaluation board available which uses the world’s fastest combination of GaN power transistors and power drivers. Based on the field properties of the basic structures, optimized detector layout of a multi-GMR sensing system can be decided to achieve accurate current sensing. “Transphorm’s analog evaluation board provides an unprecedented opportunity to access our highly efficient GaN in the easiest way possible. You are free to opt out any time or opt in for other cookies to get a better experience. The EPC9086 is a half-bridge board that uses one PE29102 to drive the 30V, 15A EPC2111 EPC eGaN® half bridge. On-board voltage regulators create +5 V for the logic circuit and +6.5 V for the gate driver. GaN Systems is the leader in Gallium Nitride (GaN) based power management devices, specializing in power conversion, semiconductors and transistors. Click to enable/disable essential site cookies. The evaluation boards listed here have been replaced with newer versions. This motherboard, with power magnetics and storage capacitors, allows you to implement an open-loop power converter when supplied with a FET daughter board … Required. The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. You can also change some of your preferences. GaN Systems and On Semiconductor have teamed up to design a 1MHz half bridge evaluation board using a GaN daughter board with a 650 V, 30 A GaN E-HEMT switch and a high speed gate driver board. LMG1205HBEVM Order now. The GaN Systems GSWP300W-EVBPA evaluation board is a 300W, 6.78 MHz Class EF2 power amplifier for wireless power transfer. We need 2 cookies to store this setting. Image (modified) used courtesy of GaN Systems . The evaluation boards listed here have been replaced with newer versions. The 4 kW highline (180-260 V) and 2 kW lowline (90-120 V) evaluation kit does not require any DSP firmware programming, thus adapting to standard CCM boost AC-to-DC PFC power stages. User’s Guide This evaluation board demonstrates how to use the IGT40R070D1 E8220 CoolGaN™ gallium nitride transistor together with the MERUS™ IRS20957SPBF … LMG1205HBEVM EU Declaration of Conformity (DoC), LMG1205 80-V, 1.2-A to 5-A, Half Bridge GaN GS65011-EVBEZ评估板允许用户评估氮化镓系统 (GaN Systems)的EZDrive™方案。EZDrive™是一种经济简便的GaN驱动方案，利用标准的已经集成了MOSFET驱动的电路控制芯片来直接驱动GaN器件。这种方案可应用与各种功率等级，开关频率和任何LLC和PFC的控制器。 A fabless power semiconductor company, GaN Systems is headquartered in Ottawa, Canada. If the backside of the daughter board is marked with the GaN System’s logo, you have an earlier version, the GS66508T-EVBDB, which is covered by this set of documents. This evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or … The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. Evaluation board. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. However, adequate thermal management (forced air, running at low frequency etc) should be followed to ensure that the maximum operating temperature specification  for the on-board components is not exceeded. The vertical mounting feature of these half bridge platforms is beneficial in high-power systems more than 5kW. The 4 kW highline (180-260 V) and 2 kW lowline (90-120 V) evaluation kit does not require any DSP firmware programming, thus adapting to standard CCM boost AC-to-DC PFC power stages. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design. 80-V 10A Power Stage EVM - The LMG1205 half-bridge EVM board is a small, easy to use, power stage with an external PWM signal. GaN Systems GSWP100W-EVBPA 100W Evaluation Board is designed to support and expedite wireless power transfer applications. The new GS-EVB-AUD-xxx1-GS GaN-based evaluation board platform provides an excellent reference design for implementing a high-performance, low-cost audio system. GaN Systems and ON Semiconductor have teamed up to create the NCP51820 HB GaN Driver Evaluation Board (EVB), an EVB intended to replace the driver and power MOSFETs used in existing half-bridge or full-bridge power supplies.. Half-bridge evaluation board from GaN Systems and ON Semiconductor. The evaluation boards listed here have been replaced with newer versions. Gerber Design Files. Why do I need this? *Requires a motherboard (GS665MB-EVB) GaN Systems and ON Semiconductor Release 100V High-Speed, Half Bridge Evaluation Board. GaN can improve overall system efficiency with lower on-resistance and ... ACPL-P346 can also be used to drive GaN devices. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation, Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board, Current shunt position for switching characterization testing, Universal form factor and footprint for all products, Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN, E-HEMT in traditional through-hole type power supply board. YesI agree that the information I provide will be used in accordance with the terms of GaN Systems. No results found. 3600W, 385V to 52V LLC DC-DC demonstration board using CoolGaN™ 600V e-mode HEMT IGT60R070D1 . Evaluation Boards; EVAL_3K6W_LLC_GAN; EVAL_3K6W_LLC_GAN. Since these providers may collect personal data like your IP address we allow you to block them here. LMG34XX-BB-EVM – LMG34xx GaN system-level evaluation motherboard for LMG341x family. This 600V gallium nitride (GaN) half-bridge evaluation board enables easy, rapid setup and test of CoolGaN™ transistors. The EVM is not suitable for transient measurements as it’s an open loop board. Privacy Policy. The module is capable of delivering a maximum of 10A of current. The GS66504B-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66504B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. Switch, DC-link capacitor and AC node currents in a GaN Systems evaluation board are experimentally sensed with the multi-GMR system. LMG34XX-BB-EVM – LMG34xx GaN system-level evaluation motherboard for LMG341x family. Schematic Diagram Please clear your search and try again. 技术亮点 “电流连续模式无桥图腾柱PFC评估板; 交流输入（85V-264伏) 1.2千万连续功率输出@240V交流输入 You always can block or delete cookies by changing your browser settings and force blocking all cookies on this website. The EVM is suitable for evaluating the performance of the LMG1205 driving a GaN half-bridge in many different DC-DC converter topologies. The half bridge evaluation assemblies come in a 120A / 13mΩ and 60A / 25mΩ variants. View current list of evaluation boards >, 650 V GaN E-HEMT Daughter Board: Revision 1. Transphorm's new analog control evaluation board eliminates need for firmware development for high efficiency AC-to-DC GaN power systems. The vertical boards can easily be adapted for horizontal mounting and can be attached to the system … The EVAL_AUDAMP24 e-mode GaN HEMT-based evaluation board from Infineon Technologies is a 2-channel, 225W/ch (4Ω at ±43V) or 250 W/ch (8Ω at ±63V) half-bridge class D audio power amplifier for high-end Hi-Fi audio systems. ​​​​​​​​. Required. But this will always prompt you to accept/refuse cookies when revisiting our site. We fully respect if you want to refuse cookies but to avoid asking you again and again kindly allow us to store a cookie for that. TI's Standard Terms and Conditions for Evaluation Items apply. The GSWP100W-EVBPA includes two GS61008P 100V Gallium Nitride (GaN) on Silicon Power Enhancement-mode High Electron Mobility Transistors (E-HEMT), along with two PE29102 GaN E-HEMT drivers, in a 6.78MHz class EF2 Power Amplifier circuit.

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